| Type | Description |
|---|---|
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | TDSON-8 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Id - Continuous Drain Current: | 100 A |
| Rds On - Drain-Source Resistance: | 3.9 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Qg - Gate Charge: | 69 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 125 W |
| Channel Mode: | Enhancement |
| Tradename: | OptiMOS |
| Series: | OptiMOS 3 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 11 ns |
| Forward Transconductance - Min: | 60 S |
| Height: | 1.27 mm |
| Length: | 5.9 mm |
| Product Type: | MOSFET |
| Rise Time: | 17 ns |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 44 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Width: | 5.15 mm |
| Unit Weight: | 180 mg |
