Type | Description |
---|---|
Manufacturer: | Infineon |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package/Case: | TDSON-8 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 80 V |
Id - Continuous Drain Current: | 100 A |
Rds On - Drain-Source Resistance: | 3.9 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Qg - Gate Charge: | 69 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 125 W |
Channel Mode: | Enhancement |
Tradename: | OptiMOS |
Series: | OptiMOS 3 |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | Infineon Technologies |
Configuration: | Single |
Fall Time: | 11 ns |
Forward Transconductance - Min: | 60 S |
Height: | 1.27 mm |
Length: | 5.9 mm |
Product Type: | MOSFET |
Rise Time: | 17 ns |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 44 ns |
Typical Turn-On Delay Time: | 18 ns |
Width: | 5.15 mm |
Unit Weight: | 180 mg |